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Dr. Abhay A. Sagade

July 10, 2017, 3:12 am
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Research Department:

Research Faculty Profile Image: 
Education: 
Ph.D
Designation: 
Research Associate Professor
About: 

Education

  • PhD (Physics) – Dr. Babasaheb Ambedkar Marathwada University, Aurangabad, Maharashtra, India, 2006-2009(In collaboration with IUAC, New Delhi, India)
  • M.Sc. (Physics) –Shivaji University, Kolhapur, Maharashtra, India. 2003-2005
  • B.Sc. (Physics) – Shivaji University, Kolhapur, Maharashtra, India. 2003-2005

Time at SRM: Since June 2017:

  • Research Associate Professor in the SRM Research Institute and Department of Physics & Nanotechnology

Professional Experience

  • Research Associate Professor– SRM Research Institute,SRM University, Chennai, India. From June 2017
  • Postdoc – Department of Engineering, University of Cambridge, UK. From July 2015 to May 2017
  • Visiting Consultant – Thematic Unit of Excellence in Nano-Chemistry, JNCASR, Bangalore, India. From April 2015 to July 2015
  • R&D Scientist, AMO GmbH, Aachen, Germany. From August 2012 to January 2015
  • Postdoc – Chemistry & Physics of Materials, JNCASR, Bangalore, India. From May 2009 to July 2012

Courses Taught

  • Introduction to Nanoelectronics (NT1202), SRM University
Weight: 
25
Research Interests: 

Research Interests:

  • Synthesis of 2D materials by CVD; solution based growth of organic & inorganic nanowires, and metal chalcogenide films
  • Interface engineering and atomic layer deposition; encapsulations
  • Mask and mask-less lithographic processing
  • Electronic devices: FETs; Schottky diodes; physical sensors: photons, Hall, strain, temperature, gas flow; chemical sensors: ammonia, hydrogen, humidity; resistive switching memory
  • RF and bendable nanoelectronics; temperature dependent charge transport at nanoscale

Research Summary

After completing two years of Postdoctoral work at University of Cambridge, UK, Dr Abhay Sagade joined SRM Research Institute and Department of Physics & Nanotechnology from June 2017. His research explores low-dimensional studies of novel electronic materials, components and device architectures. In particular, charge transport in electronic components such as field effect transistors, Schottky diodes, physical and chemical sensors and bendable devices. Various functional materials are deployed in these applications including graphene, organic & inorganic nanowires, and metal chalcogenide thin films. A number of research projects are aimed to work in close industrial links and large network of international collaborations.

Dr Sagade has co-authored more than 40 peer-reviewed publications, 1 US patent and 2 US/world patent applications. He is a member of American Association of Advancement of Science (AAAS), and Materials Research Society Singapore. He is reviewer of several leading journals from ACS, IOP, Wiley, RSC, Elsevier, Springer, etc. Publishers e.g. Advanced Functional Materials, 2D Materials, ACS Applied Materials and Interfaces, Chemistry-A European journal, Sensors and Actuators B, RSC Advances, IEEE transactions on Electronic Devices, etc.

Research achievements:

  • Development of sub-15 nm thin graphene-AlOxbased nanolaminates for ultra-high permeation barrier
  • Over 1.5 years air stable encapsulation of graphene devices with ALD oxide. Graphene RF transistors on plastic substrate operating at 1 GHz cut-off frequency.
  • Measurement of record high sensitive pT magnetic field detection using BN/G/BN heterostructure at room temperature in ambient
  • Selective supramolecular nanowire high mobility FET fabrication and measurements
  • Ultra-fast detection of breath humidity using supramolecular nanowires
  • Fabrication of semitransparent, flexible and high sensitive soft-lithographically patterned Pd micro-ribbons highly sensitive strain gauge

Industrial interaction:

  • 2015-2017 At FlexEnable Cambridge UK: AC testing of OFETs in LCD displays. At Centre for Process Innovation Durham UK: Moisture permeation barrier study of large area graphene membranes. At National Physical Laboratory UK: Hydrogen permeation investigation of graphene based films.
  • 2012-2015 At AMO GmbH Germany as R&D Scientist: Development of encapsulation ofgraphene devices on solid and flexible substrates.

 

 

Publications: 

Key Publications

  • Graphene-based nanolaminates for ultra-high permeation barrier: Abhay A. Sagade, A. I. Aria, S. Edge, Paolo Melgari, BjoernGieseking, Bernhard C. Bayer, Jannik C. Meyer, David Bird, Paul Brewer, Stephan Hofmann. npj 2D Materials and Applications(Nature)(2017) (Just accepted). [corresponding author]
  • Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide: J. Alexander-Webber, Abhay A. Sagade*, A. I. Aria, Zenas A. Van Veldhoven, P. Braeuninger-Weimer, A. Cabrero-Vilatela, Wang, Ruizhi, M.-B. Martin, J. Sui, M. Connolly, S. Hofmann. 2D Materials4 (2016) 011008. [corresponding author](Citations = 4, IF= 6.93) (Most read article in Dec. 2016, Jan. 2017)
  • Ultra-sensitive Hall-sensor based on graphene encapsulated in hexagonal boron nitride: J. Dauber, Abhay A. Sagade, Martin Oellers, Kenji Watanabe, Takashi Taniguchi, D. Neumaier, C. Stampher. Appl. Phys. Lett. 106 (2015) 193501. (News: Nature Index, Nanotechnology Now, NanoWerk, Graphene-info, Newmaterialsnews.com, Nanotechmag.com, NanoGraphene.org, NanoNet.org) (Citations = 13, IF=3.2)
  • Highly air stable passivation of graphene based field effect devices: Abhay A. Sagade*, D. Neumaier, D. Schall, M. Otto, AmaiaPesquera, Alba Centeno, AmaiaZurutuzaElorza, H. Kurz. Nanoscale7 (2015) 3558. (News: IEEE Spectrum, Nanotechnology Now, NanoWerk, Graphene-info, Controlled Environments, Newelectronics) (Citations = 38, IF=7.7) [corresponding author]
  • High-mobility field effect transistors based on supramolecular charge transfer nanofibres: Abhay A. Sagade, K. Venkata Rao, U. Mogera, Subi J. George, A. Datta, and G. U. Kulkarni. Adv. Mater.25 (2013) 559. (Citations = 34, IF=19.89)

Total Publications

Patents:

  • US 14/124,243 (20140174190 A1): Manufacturing strain sensitive sensors and/or strain  (Grranted) resistant conduits from a metal and carbon matrix.
  • US 13/599,810 (20140065359 A1): Graphene ribbons and methods for their preparation and use.
  • US 14/372,693 (20140379299 A1): A system and a method to detect hydrogen leakage using nano-crystallised palladium gratings.

In international peer-reviewed journals:

  • Graphene-based nanolaminates for ultra-high permeation barrier: Abhay A. Sagade*, A. I. Aria, S. Edge, Paolo Melgari, BjoernGieseking, Bernhard C. Bayer,Jannik C. Meyer, David Bird, Paul Brewer, Stephan Hofmannnpj 2D Materials and Applications(Nature) (2017) (Just accepted). [corresponding author]
  • Low resistive edge contacts to CVD-grown graphene using CMOS compatible metals. S. Mehardad, M. Otto, Abhay A. Sagade, Carlos Chavarin, Wolfgang Mertin, Gerd Bacher, Daniel Neumaier.Annalen der Physik(2017) (In production) (IF=3.3)
  • Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide: J. Alexander-Webber, Abhay A. Sagade*, A. I. Aria, Zenas A. Van Veldhoven, P. Braeuninger-Weimer, A. Cabrero-Vilatela, Wang, Ruizhi, M.-B. Martin, J. Sui, M. Connolly, S. Hofmann.2D Materials4 (2016) 011008. [corresponding author](Citations = 6, IF= 6.93) (Most read article in Dec. 2016, Jan. 2017)
  • The parameter space of atomic layer deposition of ultra-thin oxides on graphene: A. I. Aria, Kenichi Nakanishi, Long Xiao, Philipp Braeuninger, Abhay A. Sagade, Jack A. Alexander-Webber, S. Hofmann.ACS Appl. Mater. Interfaces8(2016) 30564. (Citations = 6, IF=7.5)
  • (Invited Review) Towards a graphene-based low intensity photon counting photodetector: Jamie O. D. Williams, Jack A. Alexander-Webber, Jon S. Lapington, Mervyn Roy, Ian B. Hutchinson, Abhay A Sagade, Marie-Blandine Martin, Philipp Braeuninger-Weimer, Andrea Cabrero-Vilatela, Ruizhi Wang, S. Hofmann, Andrea De Luca, Florin Udrea.Sensors16 (2016) 1351. (Citations = 0, IF=2.67) (News: Image Sensor World)
  • Electronic properties of CVD graphene: The role of grain boundaries, atmospheric doping and encapsulation by ALD: Zenas A. Van Veldhoven, Jack A. Alexander-Webber, Abhay A. Sagade, Philipp Braeuninger-Weimer and S. Hofmann.Physica Status Solidi b12 (2016) 2321 (Citations = 4, IF=1.6) (Most read article in 2016 and 2017)
  • Infrared transparent graphene heater for silicon photonic integrated circuits: Daniel Schall, Muhammad Mohsin, Abhay A. Sagade, Martin Otto, Anna Lena Giesecke, Bartos Chmielak, Daniel Neumaier,and Heinrich Kurz.Optics Express24 (2016) 7871. (Citations = 12, IF=3.3)
  • On the origin of contact resistances in graphene devices fabricated by optical lithography: C. A. Chavarin, Abhay A. Sagade, D. Neumaier, G. Bacher, and W. Mertin.Appl. Phys. A 122 (2016) 58. (Citations = 9, IF=1.44)
  • Defining switching efficiency of multi-level resistive memory with PdO as example: K. D. M. Rao, Abhay A. Sagade, R. John, T. Pradeep, and G. U. Kulkarni.Adv. Elec. Mater.2 (2016) 1500286. (News: NanoWerk) (Citations = 1, IF = 4.2)
  • Experimental verification of electro-refractive phase modulation in graphene: Muhammad Mohsin, Daniel Neumaier, Daniel Schall, Martin Otto, Christopher
  • Matheisen, Anna Lena Giesecke,Abhay A. Sagade and H. Kurz.Sci. Rep. (Nature.com)5 (2015) 10967. (Citations = 22, IF= 4.25)
  • A physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data: F. A. Chaves, D. Jemenez, Abhay A. Sagade, Wonjae Kim, JuhaRiikonen, HarriLipsanen, and D. Neumaier.2D Materials2 (2015) 025006. (Citations = 6, IF= 6.93)
  • Ultra-sensitive Hall-sensor based on graphene encapsulated in hexagonal boron nitride: J. Dauber, Abhay A. Sagade, Martin Oellers, Kenji Watanabe, Takashi Taniguchi, D. Neumaier, C. Stampher.Appl. Phys. Lett.106 (2015) 193501. (News: Nature Index, Nanotechnology Now, NanoWerk, Graphene-info, Newmaterialsnews.com, Nanotechmag.com, NanoGraphene.org, NanoNet.org) (Citations = 11, IF=3.2)
  • Highly air stable passivation of graphene based field effect devices: Abhay A. Sagade, D. Neumaier, D. Schall, M. Otto, AmaiaPesquera, Alba Centeno, AmaiaZurutuzaElorza, H. Kurz.Nanoscale7 (2015) 3558. (News: IEEE Spectrum, Nanotechnology Now, NanoWerk, Graphene-info, Controlled Environments, Newelectronics) (Citations = 38, IF=7.5) [corresponding author]
  • Metal-organic molecular device for non-volatile memory storage. B. Radha, Abhay A. Sagade and G. U. Kulkarni.Appl. Phys. Lett.105 (2014)083103. (News: Highlighted in ‘Nature Index’) (Citations = 4, IF=3.2)
  • Ultrafast response humidity sensor using supramolecular nanofibre and its application in monitoring breath humidity and flow: U. Mogera#, Abhay A. Sagade#, Subi J. George, and G. U. Kulkarni.Sci. Rep.4 (2014) 4103. (Nature.com; # Equal contribution). (New: Biomedical Cure and Care)(Citations =56, IF= 4.25)
  • A charge transfer single crystal field effect transistor operating at low voltages: Abhay A. Sagade, K. Venkata Rao, Subi J. George, A. Datta, and G. U. Kulkarni.Chem. Comm.49 (2013)5847. (Citations = 33, IF=6.6)
  • High-mobility field effect transistors based on supramolecular charge transfer nanofibres: Abhay A. Sagade, K. Venkata Rao, U. Mogera, Subi J. George, A. Datta, and G. U. Kulkarni.Adv. Mater.25 (2013) 559. (Citations = 35, IF=19.89)
  • A low cost optical hydrogen sensing device using nanocrystalline Pd grating: Ritu Gupta, Abhay A. Sagade, and G. U. Kulkarni.Int. J. Hydrogen Energy37 (2012) 9443. (Citations = 19, IF=3.5)
  • Ultra-fast direct ablative patterning of HOPG by single laser pulses to produce graphene ribbons: Narendra Kurra, Abhay A. Sagade and G. U. Kulkarni.Adv. Fun. Mater.21 (2011) 3836. (News: Nature India and MaterialsView.com) (Citations = 11, IF=12.5)
  • Dynamic self-assembly of charge-transfer nanofibers of tetrathiafulvalene derivatives with F4TCNQ: Ankit Jain, K. Venkata Rao, UmeshaMogera, Abhay A. Sagade and Subi J. George.Chem. Eur. J.17 (2011) 12355. (Citations = 31, IF=5.6)
  • Flexible and semi-transparent strain sensors based on micromoldedPd nanoparticle-carbon micro-stripes: B. Radha, Abhay A. Sagade and G. U. Kulkarni.ACS Appl. Mater. Interfaces3 (2011) 2173. (News: VerticalNews.com, Highlighted in top 5 of the issue) (Citations = 23, IF=7.5)
  • Direct micromolding of Pd–stripes for electronic applications: B. Radha, Abhay A. Sagade, Ritu Gupta and G. U. Kulkarni.J. Nanosci. Nanotech.11 (2011) 1. (Citations = 3, IF=1.4)
  • Intricate nature of Pd nanocrystal-hydrogen interaction investigated using thermolysedPdhexadecylthiolate films: Abhay A. Sagade#, B. Radha# and G. U. Kulkarni.Sens. Actuators B: Chemical149 (2010) 345. (# Equal contribution) (Citations=10, IF= 5.2)
  • Room temperature electrosynthesis of ZnSe thin films: Y. G. Gudage, N. G. Deshpande, Abhay A. Sagade and Raphal Sharma.J. Alloys and Compounds488 (2009) 157. (Citations=29, IF=3.01)
  • Effect of high electronic energy loss of 100 MeV gold heavy ions in copper chalcogenide thin films: Opto-electronic properties study: Ramphal Sharma, Abhay A. Sagade et al. J. Non-cryst. Solids355 (2009) 1653. (Citations=6, F=2.12)
  • Effect of substrate on performance of copper sulfide thin film ammonia gas sensor: Abhay A. Sagade,Ramphal Sharma and J. C. Vyas.Sens. Lett.7 (2009) 550. (IF=1.2)
  • Modifications of structural, optical and electrical properties of nanocrystalline bismuth sulphide thin films by using swift heavy ions: R. R. Ahire, Abhay A. Sagade et al. Current Appl. Phys.9 (2009) 374. (Selected in top 25 in Nanoscience and Nanotechnology of Sciencedirect, 2009) (Citations=22, IF= 1.97)
  • Enhancement in sensitivity of copper sulfide ammonia gas sensor: Effect of SHI irradiation: Abhay A. Sagade*, Ramphal Sharma and Indra Sulania.J. Appl. Phys.105 (2009) 43705. (Citations=38, IF=2.2) [corresponding author]
  • Effect of annealing temperature on ZnO deposited by SILAR: A. Ghosh, N. G. Deshpande, Y. G. Gudage, A. Ghosh, R. Joshi, Abhay A. Sagade, D. M. Phase and Ramphal Sharma.J. Alloys and Compounds 469 (2009) 56. (Citations=65, IF=3.13)
  • Electrical characterization of 100 MeV gold heavy ion irradiated Cu1.4S/Au Schottky barrier diode: Abhay A. Sagade et al. Radiation Effects and Defects in Solids164 (2009) 31. (IF=0.44)
  • Copper sulphide as an ammonia gas sensor working at room temperature: Abhay A. Sagade and Ramphal Sharma.Sens. Actuators B: Chemical133 (2008) 135. (Citations=162,IF= 5.2)
  • A comparative study of the physical properties of CdS, Bi2S3 and composite CdS-Bi2S3 thin films for photosensor application: R. R. Ahire, N. G. Deshpande, Y. G. Gudage, Abhay A. Sagade, S. D. Chavhan, D. M. Phase and Ramphal Sharma.Sens. Actuators A: Physical140 (2007) 207. (Citations=30, IF=2.49)
  • Structural damages studies in conducting indium-tin oxide (ITO) thin films induced by Au8+ swift heavy ions (SHI) irradiation: N. G. Deshpande, Abhay A. Sagade, et al. Vacuum82 (2007) 39. (Citations= 21, IF=1.6)
  • Engineering of nanocrystalline cadmium sulphide thin films by using swift heavy ions: R. R. Ahire, Abhay A. Sagade, N. G. Deshapande, S. D. Chavhan, F. Singh and Ramphal Sharma.J. Physics D: Appl. Phys.40 (2007) 4850. (Citations=44, IF=2.5)
  • Photoelectrochemical (PEC) studies on CdSe thin films electrodeposited from non-aqueous bath on different substrates: Y. G. Gudage, et al. Bull. Mater. Sci.30 (2007) 321. (Citations=30, IF=0.9)
  • Growth and characterization of CdZn(S1-xSex)2 alloy thin film deposited by solution growth technique: S. D. Chavhan, et al. J. Alloys and Compounds436 (2007) 442. (Citations=17, IF=3.12)
  • Growth and characterization of tin disulphide thin films deposited by successive ionic layer adsorption and reaction (SILAR) technique: N. G. Deshpande, et al. J. Alloys and Compounds436 (2007) 400. (Citations=109, IF=3.12)
  •  Gigantic irradiation effect of 100 MeV Au swift heavy ions on copper sulphide with different chemical compositions: Abhay A. Sagade, N. G. Deshpande, S. D. Chavhan, R. P. Sharma, D. K. Avasthi, F. Singh, A. Tripathi and R. R. Ahire.Radiation Effects and Defects in Solids162 (2007) 77. (Citations=12, IF=0.55)

In conference proceedings:

  • Chemical composition dependent photoluminescence from nanocrystalline copper sulphide: 52nd DAE-SSPS 2007, Mysore, Karnataka, India.
  • Interaction between light holes and photons in copper sulphide: 53rd DAE-SSPS 2008, Mumbai, India.
  • Evidence of phonon condensers at nanoscale: AIP Proceedings p. 482. ICTOPON-2009, Allahabad, India.
  • Graphene-based MMIC process development and RF passives design: German Microwave Conference 2015, p. 299, Nürnberg, Germany.
  • Experimental demonstration of electro-refractive phase modulators based on graphene: Advanced Photonics 2015, p. IM4A.1, Boston, Massachusetts United States.
  • Working towards graphene-based detectors for high sensitivity photodetection: IEEE Photonics Conference (IPC) 2016, p. 240, Hawaii, USA.
  • Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering: CLEO 2017, p. JTh2A.108, San Jose, California, United States.
     
Opportunities & Contact: 

Mobile: +91 9834223272

Email: abhay.a@ktr.srmuniv.ac.in

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